|
|
|
|
|
|||
|
|||
|
|
|
Twinning boundaries parallel to pseudo cubic cell. Grown czochralski method the most
widely used substrate for high frequency, microwave applications on (100) orientation. Available any size up to 3" diameter. Twin free and defect free is one of the best selling substrates for HTSC Film growth and is also being used as a substrate for III - V films. Available any size up to 3"
diameter or 2" x 2" square. Standard orientation is (100). Available also (110) or (111). MgO has dominant cleavage plane on the (100). Beware other fabricators use the cleavage break method to cheaply cut the crystal, causing
strain, inaccuracy and inconsistency. At Coating & Crystal the boules are inspected for defects and inclusions accurately x-ray oriented, staged and precision wafered. MgO is hygroscopic in nature. Our special cleaning and
packaging techniques guarantee indefinite shelf life. MgO is grown in an Arc Fusion process. Twin free and defect free. Grown czochralski method. NdGaO3 is a substrate for HTSC film growth and is available in any size up to 2" diameter standard orientation is (110) also available (100). Return to superconductor substrate properties Twin free and defect free. Al2O3 is available up to 10" diameter. Sapphire is used for a number of
applications and is grown several different methods. We offer a high quality grade specifically for HTSC film growth. Boules are accurately oriented, precision wafered, and epitaxially polished. Standard orientation is (0001)
C-plane. Also available are A-plane (1120), R-plane (1102) and M-plane (1100). Twin free and defect free. Growth method is flame fusion (Verneuil) method. Used for HTSC film growth and other applications. Maximum size (without twinning or defects) is about 23mm diameter. Standard orientation is (100) also available (110) or (111), off axis and others available.Return to superconductor substrate properties Twin free and defect free. Grown czochralski method used for HTSC film growth in (100) and (111) orientations. Used for III-V film growth on (111). Available up to 1.5" diameter.Return to superconductor substrate propertiesIII-V substrate properties Twin free and defect free. (9.5%) Yttria stabilized Zirconium Oxide growth schull method. Used
as a substrate for HTSC film growth and other applications. Any size up to 4" diameter. Standard orientations available with minimum order. |